Dr. Wenqi Huang | Atomic Physics | Research Excellence Award

Dr. Wenqi Huang is an associate professor in applied science with a Ph.D. background in microelectronics and solid-state electronics. His research centers on first-principles and theoretical studies of electronic, optical, and mechanical properties of advanced semiconductor and functional materials. His main interests include group-IV alloys such as GeSn, SiGeSn, and GePb, two-dimensional materials, and perovskite systems. He has conducted extensive investigations on band structure engineering, optical gain, luminescence regulation, piezoelectric behavior, and surface acoustic wave properties. By employing density functional theory and related computational methods, his work reveals how strain, alloy composition, doping, and reduced dimensionality can effectively tune material performance. These studies provide valuable theoretical guidance for the design of optoelectronic and microelectronic devices. His research成果 have been published in well-established journals in physics, materials science, and applied physics, demonstrating consistent contributions to theoretical materials modeling and semiconductor physics.

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